參數(shù)資料
型號(hào)： AM29F800BB-70ED
廠商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes
中文描述： 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
封裝： LEAD FREE, MO-142DD, TSOP-48
文件頁(yè)數(shù)： 38/45頁(yè)
文件大?。?/td> 1402K
代理商： AM29F800BB-70ED
March 3, 2009 21504E6
Am29F800B
41
D A TA SH EE T
REVISION SUMMARY
Revision A (August 1997)
Initial release.
Revision B (October 1997)
Global
Added -55 speed option. Changed data sheet designa-
tion from Advance Information to Preliminary.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 s
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 s.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 s after the rising
edge of WE#.
DC Characteristics
Changed to indicate VID min and max values are 11.5
to 12.5 V, with a VCC test condition of 5.0 V. Added
typical values to TTL table. Revised CMOS typical
standby current (ICC3).
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms. In Figure 19, corrected data values for chip
and sector erase.
Erase and Programming Performance
Corrected word and chip programming times.
Revision C (January 1998)
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
Revision C+1 (April 1998)
Distinctive Characteristics
Changed typical program/erase current to 30 mA to
match the CMOS DC Characteristics table.
Changed minimum endurance to 1 million write cycles
per sector guaranteed.
AC Characteristics
Erase/Program Operations: Corrected the notes refer-
ence for tWHWH1 and tWHWH2. These parameters are
100% tested. Changed tDS and tCP specifications for 55
ns device. Changed tWHWH1 word mode specification
to 12 s.
Alternate CE# Controlled Erase/Program Operations:
Corrected the notes reference for tWHWH1 and tWHWH2.
These parameters are 100% tested. Changed tDS and
tCP specifications for 55 ns device. Changed tWHWH1
word mode specification to 12 s.
Temporary Sector Unprotect Table
Added note reference for tVIDR. This parameter is not
100% tested.
Erase and Programming Performance
In Notes 1 and 6, changed the endurance specification
to 1 million cycles.
Revision C+2 (April 1998)
Product Selector Guide
Deleted the -55 speed option for VCC = 5.0 V ± 5%.
Added the -55 speed option for VCC = 5.0 V ± 10%.
Ordering Information
Va lid Combinations fo r Am29F800BT-5 5 and
Am29F800BB-55: Added the extended temperature
range for all package types.
Operating Ranges
VCC Supply Voltages: Deleted “VCC for ± 5% devices .
. . . +4.75 V to +5.25 V”. Changed “VCC for ±10%
devices . . . . +4.5 V to +5.5 V” to “VCC for all devices .
. . . +4.5 V to +5.5 V”.
Erase and Programming Performance
Note 2: Deleted “(4.75 V for -55)”.
相關(guān)PDF資料
PDF描述
AM29F800BB-70SD Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-90ED FLASH BOTTOM BLOCK 8MB, SMD, 29F800; Memory type:Bottom Block; Memory size:8Mbit; Memory configuration:1Mx8 or 512Kx16; Time, access:90ns; Voltage, Memory Vcc:5V; Case style:TSOP; Temperature, operating range:0(degree C) to RoHS Compliant: Yes
AM29F800BB-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-90SC Flash Memory IC; Access Time, Tacc:90ns; Package/Case:44-SO; Leaded Process Compatible:No; Memory Configuration:512K x 16 / 1M x 8; Memory Size:8Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No
AM29F800BB-90SD Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F800BB-70ED 制造商:Spansion 功能描述:FLASH MEMORY IC
AM29F800BB-70EF 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F800BB-70EF\\T 制造商:Spansion 功能描述:
AM29F800BB-70EF\T 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F800BB-70EI 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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