參數(shù)資料
型號(hào)： AM29F800BB-90ED
廠商： SPANSION LLC
元件分類： PROM
英文描述： FLASH BOTTOM BLOCK 8MB, SMD, 29F800; Memory type:Bottom Block; Memory size:8Mbit; Memory configuration:1Mx8 or 512Kx16; Time, access:90ns; Voltage, Memory Vcc:5V; Case style:TSOP; Temperature, operating range:0(degree C) to RoHS Compliant: Yes
中文描述： 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
封裝： LEAD FREE, MO-142DD, TSOP-48
文件頁(yè)數(shù)： 2/45頁(yè)
文件大?。?/td> 1402K
代理商： AM29F800BB-90ED
8
Am29F800B
21504E6 March 3, 2009
D A TA SH EE T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the elements below.
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29F800B
T
-70
E
C
TEMPERATURE RANGE
C
=
Commercial (0°C to +70°C)
D
=
Commercial (0°C to +70°C) with Pb-Free Package
I
=
Industrial (–40
°C to +85°C)
F
=
Industrial (–40
°C to +85°C) with Pb-Free Package
E
=
Extended (–55
°C to +125°C)
K
=
Extended (–55
°C to +125°C) with Pb-Free Package
PACKAGE TYPE
E
=
48-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 048)
S
=
44-Pin Small Outline Package (SO 044)
WB
=
48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6 x 9 mm package (FBB048)
This device is also available in Known Good Die (KGD) form. See publication number
21536 for more information.
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
=
Top sector
B
=
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29F800B
8 Megabit (1 M x 8-Bit/512K x 16-Bit) CMOS Flash Memory
5.0 Volt-only Read, Program and Erase
Valid Combinations
AM29F800BT-55,
AM29F800BB-55
EC, EI, EE, ED, EF, EK
SC, SI, SE, SD, SF, SK
AM29F800BT-70,
AM29F800BB-70
AM29F800BT-90,
AM29F800BB-90
AM29F800BT-120,
AM29F800BB-120
Valid Combinations for FBGA Packages
Order Number
Package Marking
AM29F800BT-55,
AM29F800BB-55
WBC,
WBI,
WBE,
WBD,
WBF,
WBK
F800BT55V,
F800BB55V
C, I, E,
D, F, K
AM29F800BT-70,
AM29F800BB-70
F800BT70V,
F800BB70V
AM29F800BT-90,
AM29F800BB-90
F800BT90V,
F800BB90V
AM29F800BT-120,
AM29F800BB-120
F800BT12V,
F800BB12V
相關(guān)PDF資料
PDF描述
AM29F800BB-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-90SC Flash Memory IC; Access Time, Tacc:90ns; Package/Case:44-SO; Leaded Process Compatible:No; Memory Configuration:512K x 16 / 1M x 8; Memory Size:8Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No
AM29F800BB-90SD Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-90SF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F800BB-90EI\T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP T/R
AM29F800BB-90SD 制造商:Spansion 功能描述:FLASH BOTTOM BLOCK 8MB SMD 29F800
AM29F800BB-90SD\T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns 44-Pin SO T/R
AM29F800BB-90SF 制造商:Spansion 功能描述:IC 8MEG(512KX16)BOTTOM SECTOR
AM29F800BB90SI 制造商:AMD 功能描述:NEW
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