參數(shù)資料
型號： AM29F800BB-90EF
廠商： SPANSION LLC
元件分類： PROM
英文描述： Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述： 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
封裝： LEAD FREE, MO-142DD, TSOP-48
文件頁數(shù)： 39/45頁
文件大?。?/td> 1402K
代理商： AM29F800BB-90EF
42
Am29F800B
21504E6 March 3, 2009
D A TA SH EE T
REVISION SUMMARY (Continued)
Revision D (January 1999)
Distinctive Characteristics
Added the 20-year data retention subbullet.
Ordering Information
Optional Processing: Deleted “B = Burn-in”.
DC Characteristics—TTL/NMOS Compatible
ILIT: Added OE# and RESET to the Description column.
Changed “A9 = 12.5 V” to “A9 = OE# = RESET = 12.5
V” in the Test Conditions column.
I LO, ICC1 , I CC2 : Deleted “V CC = V CC max” in
Test Conditions.
ICC3: Added Note 4, “ICC3 = 20 A max at extended
temperatures (>+85°C)”.
DC Characteristics—CMOS Compatible
ILIT: Added OE# and RESET to the Description column.
Changed “A9 = 12.5 V” to “A9 = OE# = RESET = 12.5
V” in the Test Conditions column.
ICC1, ICC2, ICC3: Deleted “VCC = VCCmax”; added
Note 2 “Maximum ICC specifications are tested with
VCC = VCCmax”.
Revision D+1 (March 23, 1999)
Command Definitions table
Corrected SA definition in legend; range should be
A18–A12. In Note 4, A17 should be A18.
Revision D+2 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision E (November 16, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (August 4, 2000)
Global
Added FBGA package.
Revision E+2 (June 4, 2004)
Ordering Information
Added Pb-Free OPNs.
Revision E3 (December 22, 2005)
Global
Deleted reverse TSOP package option and 150 ns
speed option.
Revision E4 (May 19, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Changed tBUSY specification to maximium value.
Revision E5 (November 2, 2006)
Deleted “Not recommended for new designs” note.
Revision E6 (March 3, 2009)
Global
Added obsolescence information.
相關(guān)PDF資料
PDF描述
AM29F800BB-90SC Flash Memory IC; Access Time, Tacc:90ns; Package/Case:44-SO; Leaded Process Compatible:No; Memory Configuration:512K x 16 / 1M x 8; Memory Size:8Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No
AM29F800BB-90SD Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-90SF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F800BB-90EI\T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP T/R
AM29F800BB-90SD 制造商:Spansion 功能描述:FLASH BOTTOM BLOCK 8MB SMD 29F800
AM29F800BB-90SD\T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns 44-Pin SO T/R
AM29F800BB-90SF 制造商:Spansion 功能描述:IC 8MEG(512KX16)BOTTOM SECTOR
AM29F800BB90SI 制造商:AMD 功能描述:NEW
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