參數(shù)資料
型號： AM29F800BB-90SD
廠商： SPANSION LLC
元件分類： PROM
英文描述： Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述： 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
封裝： LEAD FREE, MO-180AA, SOP-44
文件頁數(shù)： 30/45頁
文件大小： 1402K
代理商： AM29F800BB-90SD
34
Am29F800B
21504E6 March 3, 2009
D A TA SH EE T
AC CHARACTERISTICS
Temporary Sector Unprotect
Note: Not 100% tested.
Parameter
All Speed Options
JEDEC
Std
Description
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
s
Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the
erase-suspended sector.
Figure 17.
DQ2 vs. DQ6
Enter
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Program
Resume
Embedded
Erasing
RESET#
tVIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
tVIDR
tRSP
Program or Erase Command Sequence
0 or 5 V
Figure 18.
Temporary Sector Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29F800BB-90SF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-55ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-55SD Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F800BB-90SD\T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns 44-Pin SO T/R
AM29F800BB-90SF 制造商:Spansion 功能描述:IC 8MEG(512KX16)BOTTOM SECTOR
AM29F800BB90SI 制造商:AMD 功能描述:NEW
AM29F800BT-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F800BT-55EF 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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