參數(shù)資料
型號(hào)： Am29F800BT-120DGE
廠商： Advanced Micro Devices, Inc.
英文描述： Toggle Switch; Circuitry:SPST; Switch Operation:On-Off-On; Contact Current Max:15A; Actuator Style:Bat; Switch Terminals:Solder Lug; Current Rating:15A; Leaded Process Compatible:Yes; Mounting Type:Panel; Features:Locking Actuator RoHS Compliant: Yes
中文描述： 8兆位（1 M中的x 8-Bit/512畝x 16位），5.0伏的CMOS只，引導(dǎo)扇區(qū)快閃記憶體模修訂1
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 207K
代理商： AM29F800BT-120DGE
SUPPLEMENT
5/4/98
Publication# 21631
Rev: A Amendment/+2
Issue Date: April 1998
Am29F800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation
— 5.0 Volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
s Manufactured on 0.35 m process technology
— Compatible with 0.5 m Am29F800 device
s High performance
— 90 or 120 ns access time
s Low power consumption (typical values at 5
MHz)
—1
A standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
s Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Top or bottom boot block configurations
available
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Minimum 1,000,000 write cycles per sector
guaranteed
s Compatibility with JEDEC standards
— Pinout and software compatible with single-
power-supply Flash
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關(guān)PDF資料
PDF描述
AM29F800BT-120DGE1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
Am29F800BT-120DGI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
AM29F800BT-120DGI1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
AM27S19130DC-S 16,384-BIT (2048 x 8) BIPOLAR PROM
AM27PS19130DC-S 16,384-BIT (2048 x 8) BIPOLAR PROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F800BT-120EC 制造商:Advanced Micro Devices 功能描述:
AM29F800BT-55EF 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F800BT-55SF 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F800BT-55SI 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8/512KX16 55NS 44SOIC - Rail/Tube
AM29F800BT70EC 制造商:AMD 功能描述:NEW
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