參數(shù)資料
型號(hào)： AM29F800BT-120ED
廠商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
中文描述： 512K X 16 FLASH 5V PROM, 120 ns, PDSO48
封裝： LEAD FREE, MO-142DD, TSOP-48
文件頁(yè)數(shù)： 19/45頁(yè)
文件大?。?/td> 1402K
代理商： AM29F800BT-120ED
24
Am29F800B
21504E6 March 3, 2009
D A TA SH EE T
DC CHARACTERISTICS
TTL/NMOS Compatible
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifcations are tested with VCC = VCCmax
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Not 100% tested.
5. ICC3 = 20 A max at extended temperature (>+85°C)
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC max
±1.0
A
ILIT
A9, OE#, RESET Input Load Current
VCC = VCC max;
A9 = OE# = RESET# = 12.5 V
35
A
ILO
Output Leakage Current
VOUT = VSS to VCC
±1.0
A
ICC1
VCC Active Read Current
(Notes 1, 2)
CE# = VIL, OE# = VIH,
f = 5 MHz, Byte Mode
19
40
mA
CE# = VIL, OE# = VIH,
f = 5 MHz, Word Mode
19
50
mA
ICC2
VCC Active Write Current
(Notes 2, 3 and 4)
CE# = VIL, OE# = VIH
36
60
mA
ICC3
VCC Standby Current (Notes 2, 5)
CE#, OE#, and RESET# = VIH,
0.4
1
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2.0
VCC
+ 0.5
V
VID
Voltage for Autoselect and Temporary
Sector Unprotect
VCC = 5.0 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC min
0.45
V
VOH
Output High Voltage
IOH = –2.5 mA, VCC = VCC min
2.4
V
VLKO
Low VCC Lock-Out Voltage (Note 4)
3.2
4.2
V
相關(guān)PDF資料
PDF描述
AM29F800BT-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-55ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-55SD Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-70ED Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes
AM29F800BT-90ED Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F800BT-55EF 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F800BT-55SF 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F800BT-55SI 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8/512KX16 55NS 44SOIC - Rail/Tube
AM29F800BT70EC 制造商:AMD 功能描述:NEW
AM29F800BT-70EC 制造商:Advanced Micro Devices 功能描述:
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