- 您現(xiàn)在的位置：買賣IC網 > PDF目錄166215 > AM29F800BT-55EF (SPANSION LLC) Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號： | AM29F800BT-55EF |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 512K X 16 FLASH 5V PROM, 55 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 39/45頁 |
| 文件大?。?/td> | 1382K |
| 代理商： | AM29F800BT-55EF |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁當前第39頁第40頁第41頁第42頁第43頁第44頁第45頁
42
Am29F800B
21504E8 November 17, 2009
D A TA SH EE T
REVISION SUMMARY (Continued)
Revision D (January 1999)
Distinctive Characteristics
Added the 20-year data retention subbullet.
Ordering Information
Optional Processing: Deleted “B = Burn-in”.
DC Characteristics—TTL/NMOS Compatible
ILIT: Added OE# and RESET to the Description column.
Changed “A9 = 12.5 V” to “A9 = OE# = RESET = 12.5
V” in the Test Conditions column.
I LO, ICC1 , I CC2 : Deleted “V CC = V CC max” in
Test Conditions.
ICC3: Added Note 4, “ICC3 = 20 A max at extended
temperatures (>+85°C)”.
DC Characteristics—CMOS Compatible
ILIT: Added OE# and RESET to the Description column.
Changed “A9 = 12.5 V” to “A9 = OE# = RESET = 12.5
V” in the Test Conditions column.
ICC1, ICC2, ICC3: Deleted “VCC = VCCmax”; added
Note 2 “Maximum ICC specifications are tested with
VCC = VCCmax”.
Revision D+1 (March 23, 1999)
Command Definitions table
Corrected SA definition in legend; range should be
A18–A12. In Note 4, A17 should be A18.
Revision D+2 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision E (November 16, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (August 4, 2000)
Global
Added FBGA package.
Revision E+2 (June 4, 2004)
Ordering Information
Added Pb-Free OPNs.
Revision E3 (December 22, 2005)
Global
Deleted reverse TSOP package option and 150 ns
speed option.
Revision E4 (May 19, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Changed tBUSY specification to maximium value.
Revision E5 (November 2, 2006)
Deleted “Not recommended for new designs” note.
Revision E6 (March 3, 2009)
Global
Added obsolescence information.
Revision E7 (August 3, 2009)
Global
Removed obsolescence information.
Revision E8 (November 17, 2009)
Global
Removed 90 ns and 120 ns speed options.
Removed all commercial temperature range options.
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F800BT-55SF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BT-70EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800T-120SI | FLASH 5V PROM, PDSO44 |
| AM29LV001BB-70ED | Flash Memory IC; Memory Size:1Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes |
| AM29LV002BB-120ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F800BT-55SF | 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F800BT-55SI | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8/512KX16 55NS 44SOIC - Rail/Tube |
| AM29F800BT70EC | 制造商:AMD 功能描述:NEW |
| AM29F800BT-70EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BT-70ED | 制造商:Spansion 功能描述:IC SM FLASH 5V 8MB |
發(fā)布緊急采購，3分鐘左右您將得到回復。