- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄166215 > AM29F800BT-70ED (SPANSION LLC) Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號(hào)： | AM29F800BT-70ED |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes |
| 中文描述： | 512K X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 29/45頁 |
| 文件大小： | 1402K |
| 代理商： | AM29F800BT-70ED |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當(dāng)前第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁
March 3, 2009 21504E6
Am29F800B
33
D A TA SH EE T
AC CHARACTERISTICS
WE#
CE#
OE#
High Z
tOE
High Z
DQ7
DQ0–DQ6
RY/BY#
tBUSY
Complement
True
Addresses
VA
tOEH
tCE
tCH
tOH
tDF
VA
Status Data
Complement
Status Data
True
Valid Data
tACC
tRC
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
Figure 15.
Data# Polling Timings (During Embedded Algorithms)
WE#
CE#
OE#
High Z
tOE
DQ6/DQ2
RY/BY#
tBUSY
Addresses
VA
tOEH
tCE
tCH
tOH
tDF
VA
tACC
tRC
Valid Data
Valid Status
(first read)
(second read)
(stops toggling)
Valid Status
VA
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle,
and array data read cycle.
Figure 16.
Toggle Bit Timings (During Embedded Algorithms)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F800BT-90ED | Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns RoHS Compliant: Yes |
| AM29F800BT-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BT-90SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BB-120EC | Dual Retriggerable Monostable Multivibrators 16-VQFN -40 to 85 |
| AM29F800BB-55EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F800BT-70ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F800BT70EF | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AM29F800BT-70EF | 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F800BT-70EF/T | 制造商:Spansion 功能描述:8M (1MX8/512KX16) 5V, BOOT BLOCK, TOP, TSOP48, IND, HAZMAT - Tape and Reel |
| AM29F800BT-70EF\\T | 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SECTOR 100K(CS39S) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。