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參數(shù)資料
| 型號： | AM29LV001BB-45REF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 3.0伏，只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 3/43頁 |
| 文件大?。?/td> | 493K |
| 代理商： | AM29LV001BB-45REF |
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DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21557
Issue Date:
May 5, 2006
Rev:
F
Amendment:
4
Am29LV001B
1 Megabit (128 K x 8-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■
Manufactured on 0.32 μm process technology
■
High performance
— Full voltage range: access times as fast as 55 ns
— Regulated voltage range: access times as fast as
45 ns
■
Ultra low power consumption (typical values at 5
MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■
Flexible sector architecture
— One 8 Kbyte, two 4 Kbyte, and seven 16 Kbyte
— Supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to prevent any
program or erase operations within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Unlock Bypass Mode Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■
Top or bottom boot block configurations available
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Minimum 1 million erase cycle guarantee per sector
■
20 Year data retention at 125
°
C
— Reliable operation for the life of the system
■
Package option
— 32-pin TSOP
— 32-pin PLCC
■
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■
Erase Suspend/Erase Resume
— Supports reading data from or programming data
to a sector that is not being erased
■
Hardware reset pin (RESET#)
— Hardware method for resetting the device to
reading array data
This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and
historical purposes only.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV001BB-45RJD | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV001BB-45RJF | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV001BB-5EC | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV001BB-5ED | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV001BB-5EE | 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV001BB-45REIT | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1MBIT 128KX8 45NS 32TSOP - Tape and Reel |
| AM29LV001BB-55JC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 1M-Bit 128K x 8 55ns 32-Pin PLCC |
| AM29LV001BB-70ED | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1MBIT 128KX8 70NS 32TSOP - Trays |
| AM29LV001BB-90JD | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1MBIT 128KX8 90NS 32PLCC - Rail/Tube |
| AM29LV001BT-55ED | 制造商:Spansion 功能描述:1M (128KX8) 3V, BOOT BLOCK, TOP, TSOP32, COM - Trays |
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