參數(shù)資料
型號(hào): Am29LV001BT-45RJEB
廠商: Advanced Micro Devices, Inc.
英文描述: 64KX16,TSOP(II)44,IND,SRAM
中文描述: 1兆位(128畝× 8位)的CMOS 3.0伏,只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 24/38頁
文件大?。?/td> 453K
代理商: AM29LV001BT-45RJEB
Am29LV001B
24
P R E L IM IN A R Y
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
21557C-14
Figure 11.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-45R,
-55
-70,
-90
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
21557C-15
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
21557C-16
Figure 12.
Input Waveforms and Measurement Levels
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