參數(shù)資料
型號(hào)： AM29LV002BB-55RFI
英文描述： Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime in a 16-lead SOIC Narrow package
中文描述： x8閃存EEPROM的
文件頁(yè)數(shù)： 31/35頁(yè)
文件大?。?/td> 744K
代理商： AM29LV002BB-55RFI
Am29LV040B
31
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 2.7 V (3.0 V for -60R), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 4 for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
11
s
Byte Programming Time
9
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time
(Note 3)
4.5
13.5
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9 and OE#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料
PDF描述
AM29LV002BB-70EC Dimming Ballast Control, Brown-out Protection, Programmable Preheat Time, 1.8us Deadtime in a 16-lead SOIC Narrow package
AM29LV002BB-70EE PFC Ballast Control, Thermal Overload Protection, Brown Out Protection, Programmable Preheat and Frequency, Programmable Deadtime in a 20 Lead DIP package
AM29LV002BB-70EI PFC Ballast Control, Thermal Overload Protection, Brown Out Protection, Programmable Preheat and Frequency, Programmable Deadtime in a 20 Lead DIP package
AM29LV002BB-70FC PFC Ballast Control, Thermal Overload Protection, Brown Out Protection, Programmable Preheat and Frequency, Programmable Deadtime in a 20 Lead SOIC package
AM29LV002BB-70FE IR2170S is not recommended for new designs.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV002BB-90EC 制造商:Advanced Micro Devices 功能描述:
AM29LV002BT-90EF 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 2Mbit 256K x 8bit 90ns 40-Pin TSOP
AM29LV002BT-90EI\\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel
AM29LV002BT-90EI\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel
AM29LV002T-120EC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 2M-Bit 256K x 8 120ns 40-Pin TSOP
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