參數(shù)資料
型號: AM29LV002BB-90EI
英文描述: IR2172 is not recommended for new designs.
中文描述: x8閃存EEPROM的
文件頁數(shù): 23/35頁
文件大?。?/td> 744K
代理商: AM29LV002BB-90EI
Am29LV040B
23
TEST CONDITIONS
Table 6.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Figure 9.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-60R,
-70
-90,
-120
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 10.
Input Waveforms and Measurement Levels
相關(guān)PDF資料
PDF描述
AM29LV002BB-90FC IR2172S is not recommended for new designs.
AM29LV002BB-90FE MOSFET Driver IC; Driver Type:High-Side; Package/Case:8-SOIC; Leaded Process Compatible:No; No. of Drivers:1; Offset Voltage:600V; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Sink Output Current:20mA RoHS Compliant: No
AM29LV002BB-90FI HI and LO MOS Drivers in a 8-lead SOIC package
AM29LV002BT-120EC HI and LO MOS Drivers in a 8-pin DIP package
AM29LV002BT-120EE HI and LO MOS Drivers in a 14-lead SOIC package
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