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參數(shù)資料
| 型號(hào)： | AM29LV004B-90FE |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| 封裝： | PLASTIC, TSOP-40 |
| 文件頁數(shù)： | 27/36頁 |
| 文件大?。?/td> | 459K |
| 代理商： | AM29LV004B-90FE |
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Am29LV004
33
PR EL I M I NAR Y
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a typical erase and program cycle endurance of 1,000,000 cycles. 100,000 cycles are guaranteed.
LATCHUP CHARACTERISTICS
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
11
s
Byte Programming Time
9
300
s
Excludes system level
overhead (Note 5)
Chip Programming Time
4.5
13.5
s
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C
10
Years
125
°C
20
Years
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