參數(shù)資料
型號: AM29LV004BT-120EC
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
封裝: MO-142CD, TSOP-40
文件頁數(shù): 40/40頁
文件大小: 769K
代理商: AM29LV004BT-120EC
Am29LV004B
39
REVISION SUMMARY
Revision A (January 1998)
Initial release.
Revision B (June 1998)
Expanded data sheet from Advanced Information to
Preliminary version.
Distinctive Characteristics
Changed
“Manufactured on 0.35 μm process technology”
to “Manufactured on 0.32 μm process technology”.
General Description
Second paragraph:
Changed “This device is manufac-
tured using AMD’s 0.35 μm process technology” to
“This device is manufactured using AMD’s 0.32 μm
process technology”.
Revision C (January 1999)
Global
Removed the -80 speed option.
Distinctive Characteristics
Added bullet for 20-year data retention at 125
°
C.
DC Characteristics—CMOS Compatible
I
CC1
, I
CC2
, I
CC3
, I
CC4
, I
CC5
: Added Note 2 “Maximum
I
CC
specifications are tested with V
CC
= V
CCmax
”.
Revision D (November 18, 1999)
AC Characteristics—Figure 15. Program
Operations Timing and Figure 16. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D+1 (November 13, 2000)
Global
Added table of contents. Deleted burn-in option from
Ordering Information section.
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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