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參數(shù)資料
| 型號： | AM29LV008BB-90EF |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 1M X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| 封裝： | LEAD FREE, MO-142BCD, TSOP-40 |
| 文件頁數(shù)： | 23/41頁 |
| 文件大?。?/td> | 738K |
| 代理商： | AM29LV008BB-90EF |
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DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21524
Rev: D Amendment: 7
Issue Date: February 24, 2009
Am29LV008B
8 Megabit (1 M x 8-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■ Manufactured on 0.32 m process technology
— Compatible with 0.5 m Am29LV008 device
■ High performance
— Full voltage range: access times as fast as 90 ns
— Regulated voltage range: access times as fast as
70 ns
■ Ultra low power consumption (typical values at 5
MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Top or bottom boot block configurations
available
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package option
— 40-pin TSOP
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
This product has been retired and is not recommended for designs. For new and current designs, S29AL008J supercedes Am29LV008B. This is the factory-recommended migration path.
Please refer to the S29AL008J data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV008BT-120ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV008BT-70RED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV008BT-70REF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV008BT-90ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV008BT-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV008BT-120EC | 制造商:ADV-MICRO-DEV 功能描述: |
| AM29LV008BT-80EC | 制造商:Spansion 功能描述:IC 8 MEG X 8, 3 V FLASH TOP B - Bulk |
| AM29LV008DT-90EC | 制造商:Spansion 功能描述:8M (1MX8) 3V, BOOT BLOCK, TOP, TSOP40, COM - Trays |
| AM29LV010B-45JC | 制造商:Spansion 功能描述:1M (128KX8) 3V, UNIFORM SECTOR, PLCC32, COM - Rail/Tube |
| AM29LV010B-55JCT | 制造商:Spansion 功能描述:1M (128KX8) 3V, UNIFORM SECTOR, PLCC32, COM, T&R - Tape and Reel |
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