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參數(shù)資料
| 型號(hào)： | AM29LV017M |
| 英文描述： | Am29LV017M - 16 Megabit (2 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory |
| 中文描述： | Am29LV017M - 16兆位（2米× 8位）的MirrorBit 3.0伏特，只有統(tǒng)一部門(mén)閃存 |
| 文件頁(yè)數(shù)： | 26/35頁(yè) |
| 文件大?。?/td> | 744K |
| 代理商： | AM29LV017M |
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26
Am29LV040B
AC CHARACTERISTICS
OE#
WE#
CE#
V
CC
Data
Addresses
t
DS
t
AH
t
DH
t
WP
PD
t
WHWH1
t
WC
t
AS
t
WPH
t
VCS
555h
PA
PA
Read Status Data (last two cycles)
A0h
t
CS
Status
D
OUT
Program Command Sequence (last two cycles)
t
CH
PA
Note:
PA = program address, PD = program data, D
OUT
is the true data at the program address.
Figure 12.
Program Operation Timings
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
Note:
SA = sector address (for Sector Erase), VA = Valid Address for reading status data (
see “Write Operation Status”).
Figure 13.
Chip/Sector Erase Operation Timings
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV040B-120EC | 600V Discrete IGBT in a TO-220AB package |
| AM29LV040B-120EE | 600V Copack IGBT in a D2-Pak package |
| AM29LV040B-120EI | 600V Copack IGBT in a TO-220AB package |
| AM29LV040B-120FC | 600V Copack IGBT in a TO-220AB package |
| AM29LV040B-120FE | 600V Copack IGBT in a TO-220AB package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV033C-120EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 32M-Bit 4M x 8 120ns 40-Pin TSOP |
| AM29LV033C-70EI | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 4M x 8, 40 Pin, Plastic, TSSOP |
| AM29LV033C-90EF | 制造商:Advanced Micro Devices 功能描述:4M X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| AM29LV033C-90WDI-T | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Advanced Micro Devices 功能描述: 制造商:AMD 功能描述: |
| AM29LV040B-120EC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
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