- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366463 > AM29LV033C-70FE (Advanced Micro Devices, Inc.) 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29LV033C-70FE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| 中文描述： | 32兆位（4個M × 8位）的CMOS 3.0伏特，只有統(tǒng)一部門閃存 |
| 文件頁數(shù)： | 10/48頁 |
| 文件大小： | 1023K |
| 代理商： | AM29LV033C-70FE |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁當(dāng)前第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁
Am29LV033C
9
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
the register serve as inputs to the internal state ma-
chine. The state machine outputs dictate the function
of the device. Table 1 lists the device bus operations,
the inputs and control levels they require, and the re-
sulting output. The following subsections describe
each of these operations in further detail.
Table 1.
Am29LV033C Device Bus Operations
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 12.0 ± 0.5 V, X = Don’t Care, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. When the ACC pin is at V
HH
, the device enters the accelerated program mode. See “Accelerated Program Operations” for
more information.
2.
The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
IL
. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at V
IH
.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica-
tions and to Figure 13 for the timing diagram. I
CC1
in
the DC Characteristics table represents the active cur-
rent specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V
IL
, and OE# to V
IH
.
The device features an
Unlock Bypass
mode to facili-
tate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are re-
quired to program a byte, instead of four. The “Byte
Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Table 2 indicates the address
Operation
CE#
OE#
WE#
RESET#
Addresses
DQ0–DQ7
Read
L
L
H
H
A
IN
D
OUT
Write (Note 1)
L
H
L
H
A
IN
D
IN
Standby
V
CC
±
0.3 V
X
X
V
CC
±
0.3 V
X
High-Z
Output Disable
L
H
H
H
X
High-Z
Reset
X
X
X
L
X
High-Z
Sector/Sector Block Protect
(Note 2)
L
H
L
V
ID
Sector Addresses,
A6 = L, A1 = H, A0 = L
D
IN
, D
OUT
Sector/Sector Block Unprotect
(Note 2)
L
H
L
V
ID
Sector Addresses
A6 = H, A1 = H, A0 = L
D
IN
, D
OUT
Temporary Sector/Sector Block
Unprotect
X
X
X
V
ID
A
IN
D
IN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV033C-70FI | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-70WDE | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-90WDI | 32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV033C-90 | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail |
| AM29LV033C-90EE | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV033C-90EF | 制造商:Advanced Micro Devices 功能描述:4M X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| AM29LV033C-90WDI-T | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Advanced Micro Devices 功能描述: 制造商:AMD 功能描述: |
| AM29LV040B-120EC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EC\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8 120ns 32-Pin TSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。