- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366463 > AM29LV033MU (Advanced Micro Devices, Inc.) LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 2500; Container: Reel PDF資料下載
參數(shù)資料
| 型號： | AM29LV033MU |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | LM3622 Lithium-Ion Battery Charger Controller; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 2500; Container: Reel |
| 中文描述： | 32兆位（4個M × 8位）的MirrorBit 3.0伏特，只有統(tǒng)一閃存部門與VersatileI / O控制 |
| 文件頁數(shù)： | 30/56頁 |
| 文件大?。?/td> | 1138K |
| 代理商： | AM29LV033MU |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁當(dāng)前第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁
30
Am29LV033MU
November 11, 2002
A D V A N C E I N F O R M A T I O N
ing edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6,
DQ2, or RY/BY# in the erasing sector. Refer to the
Write Operation Status
section for information on
these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a
hardware
reset
immediately
terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
Figure 7 illustrates the algorithm for the erase opera-
tion. Refer to the
Erase and Program Operations
ta-
bles in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Figure 7.
Erase Operation
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. This command is valid only during the
sector erase operation, including the 50 μs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written dur-
ing the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a typi-
cal of 5 μs (maximum of 20 μs) to suspend the erase
operation. However, when the Erase Suspend com-
mand is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
duces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the
Write Operation Status
section for infor-
mation on these status bits.
After an erase-suspended program operation is com-
plete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard byte program operation.
Refer to the
Write Operation Status
section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode
and
Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The address
of the erase-suspended sector is required when writ-
ing this command. Further writes of the Resume com-
mand are ignored. Another Erase Suspend command
can be written after the chip has resumed erasing.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 10 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV033MUU101WCI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU101EI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU90WCI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU101RWCI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU112RFI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV040B-120EC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EC\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8 120ns 32-Pin TSOP |
| AM29LV040B-120JC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV040B-120JC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32PLCC - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。