參數(shù)資料
型號(hào): AM29LV033MUU101RFI
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述: 32兆位(4個(gè)M × 8位)的MirrorBit 3.0伏特,只有統(tǒng)一閃存部門(mén)與VersatileI / O控制
文件頁(yè)數(shù): 5/56頁(yè)
文件大?。?/td> 1138K
代理商: AM29LV033MUU101RFI
November 11, 2002
Am29LV033MU
5
A D V A N C E I N F O R M A T I O N
PRODUCT SELECTOR GUIDE
Note:
1. See “AC Characteristics” for full specifications.
2. For the Am29LV033MU device, the last numeric digit in the speed option (e.g. 90R, 101, 112, 120) is used for internal purposes
only. Please use OPNs as listed when placing orders.
BLOCK DIAGRAM
Part Number
Am29LV033MU
Speed
Option
V
CC
= 3.0–3.6 V
90R
(V
IO
= 3.0–3.6 V)
101R
(V
IO
= 2.7–3.6 V)
112R
(V
IO
=1.65–3.6 V)
120R
(V
IO
=1.65–3.6 V)
V
CC
= 2.7–3.6 V
101
(V
IO
= 2.7–3.6 V)
112
(V
IO
=1.65–3.6 V)
120
(V
IO
=1.65–3.6 V)
Max. Access Time (ns)
90
100
110
120
Max. CE# Access Time (ns)
90
100
110
120
Max. Page access time (t
PACC
)
25
30
30
40
30
40
Max. OE# Access Time (ns)
25
30
30
40
30
40
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
V
CC
Detector
State
Control
Command
Register
V
CC
V
SS
V
IO
WE#
ACC
CE#
OE#
STB
STB
DQ0
DQ7
Sector Switches
RY/BY#
RESET#
Data
Latch
Y-Gating
Cell Matrix
A
A21–A0
相關(guān)PDF資料
PDF描述
AM29LV033MUU112EI 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV033MUU112FI 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV033MUU112REI 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV033MUU112RWCI 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
AM29LV033MUU120EI 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
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