- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366464 > AM29LV033MUU112REI (Advanced Micro Devices, Inc.) 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control PDF資料下載
參數(shù)資料
| 型號： | AM29LV033MUU112REI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 32兆位（4個M × 8位）的MirrorBit 3.0伏特，只有統(tǒng)一閃存部門與VersatileI / O控制 |
| 文件頁數(shù)： | 20/56頁 |
| 文件大小： | 1138K |
| 代理商： | AM29LV033MUU112REI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當(dāng)前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁
20
Am29LV033MU
November 11, 2002
A D V A N C E I N F O R M A T I O N
.
Figure 3.
SecSi Sector Protect Verify
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 10 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V
CC
power-up
and power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not ac-
cept any write cycles. This protects data during V
CC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until V
CC
is greater than V
LKO
. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V
CC
is
greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automati-
cally reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE (CFI)
The Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-inde-
pendent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the sys-
tem writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data.
The system can read CFI information at the addresses
given in Tables 6–9. To terminate reading CFI data,
the system must write the reset command.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 6–9. The
system must write the reset command to return the de-
vice to reading array data.
For further information, please refer to the CFI Specifi-
cation and CFI Publication 100, available via the
World Wide Web at http://www.amd.com/flash/cfi. Al-
ternatively, contact an AMD representative for copies
of these documents.
Write 60h to
any address
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
START
RESET# =
V
IH
or V
ID
Wait 1
μ
s
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Remove V
or V
ID
from RESET#
Write reset
command
SecSi Sector
Protect Verify
complete
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV033MUU112RWCI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU120EI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU120FI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU120REI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV033MUU120RFI | 32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV040B-120EC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EC\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32TSOP - Tape and Reel |
| AM29LV040B-120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8 120ns 32-Pin TSOP |
| AM29LV040B-120JC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV040B-120JC\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 120NS 32PLCC - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。