參數(shù)資料
型號(hào): AM29LV040B-120JE
英文描述: 600V Copack IGBT in a D2-Pak package
中文描述: x8閃存EEPROM的
文件頁(yè)數(shù): 23/35頁(yè)
文件大小: 744K
代理商: AM29LV040B-120JE
Am29LV040B
23
TEST CONDITIONS
Table 6.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Figure 9.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-60R,
-70
-90,
-120
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 10.
Input Waveforms and Measurement Levels
相關(guān)PDF資料
PDF描述
AM29LV040B-120JI x8 Flash EEPROM
AM29LV040B-55REC 600V Discrete IGBT in a TO-3P (TO-247AC) package
AM29LV040B-55REI 600V Discrete IGBT in a TO-3P (TO-247AC) package
AM29LV040B-55RFC 600V Copack IGBT in a TO-3P (TO-247AC) package
AM29LV040B-55RFI 600V Discrete IGBT in a TO-3P (TO-247AC) package
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