參數(shù)資料
型號: AM29LV040B-60REE
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
中文描述: 4兆位(512畝× 8位),3.0伏的CMOS只,均勻部門32引腳閃存
文件頁數(shù): 32/37頁
文件大?。?/td> 471K
代理商: AM29LV040B-60REE
32
Am29LV040B
21354E4 October11,2006
D A T A S H E E T
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
WHWH1 or 2
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Notes:
1. PA = Program Address, PD = Program Data, DQ7# = complement of the data written to the device, D
OUT
is the data written
to the device.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 17.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
AM29LV040B-60REF 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-60REK 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-60RJD 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-60RJE 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-60RJF 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
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