參數(shù)資料
型號(hào)： AM29LV040B-60RJD
廠商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
中文描述： 4兆位（512畝× 8位），3.0伏的CMOS只，均勻部門(mén)32引腳閃存
文件頁(yè)數(shù)： 3/37頁(yè)
文件大小： 471K
代理商： AM29LV040B-60RJD
DATA SHEET
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21354
Rev:
E
Amendment:
4
Issue Date:
October 11, 2006
Am29LV040B
4 Megabit (512 K x 8-Bit)
CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
DISTINCTIVE CHARACTERISTICS
■
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■
Manufactured on 0.32 μm process technology
■
High performance
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast as
60 ns
■
Ultra low power consumption (typical values at
5 MHz)
— Automatic sleep mode: 0.2 μA
— Standby mode: 0.2 μA
— Read mode: 7 mA
— Program/erase mode: 15 mA
■
Flexible sector architecture
— Eight 64 Kbyte sectors
— Any combination of sectors can be erased;
supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked via programming
equipment
■
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■
Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
writes and verifies data at specified addresses
■
Minimum 1,000,000 erase cycles guaranteed
■
20-year data retention at 125
°
C
— Reliable operation for the life of the system
■
Package option
— 32-pin PLCC
— 32-pin TSOP
■
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
■
Erase Suspend/Resume
— Supports reading data from or programming data
to a sector not being erased
The Am29LV040B is not offered for new designs. Please contact a Spansion representative for alternates.
相關(guān)PDF資料
PDF描述
AM29LV040B-60RJE 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-60RJF 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-60RJK 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-70ED 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-70EF 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
am29lv040b-60rji 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 4Mbit 512K x 8bit 60ns 32-Pin PLCC 制造商:Advanced Micro Devices 功能描述:
AM29LV040B-60RJI\\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 60NS 32PLCC - Rail/Tube
AM29LV040B-60RJI\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 60NS 32PLCC - Rail/Tube
AM29LV040B-70EC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP
AM29LV040B-70ED 制造商:Spansion 功能描述:FLASH 3V 4MB SMD 29LV040 TSOP32
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