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參數(shù)資料
| 型號(hào)： | AM29LV040B-90JC |
| 英文描述： | 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
| 中文描述： | x8閃存EEPROM的 |
| 文件頁(yè)數(shù)： | 1/35頁(yè) |
| 文件大?。?/td> | 744K |
| 代理商： | AM29LV040B-90JC |
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This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21354
Issue Date:
November 13, 2000
Rev:
D
Amendment/
+1
Am29LV040B
4 Megabit (512 K x 8-Bit)
CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
Manufactured on 0.32 μm process technology
I
High performance
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast as
60 ns
I
Ultra low power consumption (typical values at
5 MHz)
— Automatic sleep mode: 1 μA
— Standby mode: 1 μA
— Read mode: 7 mA
— Program/erase mode: 15 mA
I
Flexible sector architecture
— Eight 64 Kbyte sectors
— Any combination of sectors can be erased;
supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked via programming
equipment
I
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
I
Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write/erase cycles
guaranteed
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package option
— 32-pin PLCC
— 32-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
I
Erase Suspend/Resume
— Supports reading data from or programming data
to a sector not being erased
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV002BB-90EE | IR2171 is not recommended for new designs. |
| AM29LV002BB-90EI | IR2172 is not recommended for new designs. |
| AM29LV002BB-90FC | IR2172S is not recommended for new designs. |
| AM29LV002BB-90FE | MOSFET Driver IC; Driver Type:High-Side; Package/Case:8-SOIC; Leaded Process Compatible:No; No. of Drivers:1; Offset Voltage:600V; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Sink Output Current:20mA RoHS Compliant: No |
| AM29LV002BB-90FI | HI and LO MOS Drivers in a 8-lead SOIC package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV040B-90JD | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8 90NS 32PLCC - Rail/Tube 制造商:Spansion 功能描述:FLASH 3V 4MB SMD 29LV040 PLCC32 |
| AM29LV040B-90JF | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AM29LV065DU120REF | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 120ns 48-Pin TSOP 制造商:Spansion 功能描述:SPZAM29LV065DU120REF MEM FLASH EOL160610 制造商:Spansion 功能描述:Flash Memory IC |
| AM29LV065DU120REI | 制造商:Spansion 功能描述:IC, FLASH MEM, 64MBIT, 120NS, 48-TSOP, Memory Type:Flash, Memory Size:64Mbit, Me |
| AM29LV065DU120RWHI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 120ns 63-Pin FBGA |
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