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參數資料
| 型號： | AM29LV065MU110EF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 64兆位（8米× 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁數： | 30/62頁 |
| 文件大?。?/td> | 778K |
| 代理商： | AM29LV065MU110EF |
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28
Am29LV065MU
September 12, 2006
D A T A S H E E T
The Write Buffer Programming Sequence can be
aborted in the following ways:
■
Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
■
Write to an address in a sector different than the
one specified during the Write-Buffer-Load com-
mand.
■
Write an Address/Data pair to a different
write-buffer-page than the one selected by the
Starting Address during the write buffer data load-
ing stage of the operation.
■
Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the de-
vice for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is re-
quired when using Write-Buffer-Programming features
in Unlock Bypass mode.
Accelerated Program
The device offers accelerated program operations
through the ACC pin. When the system asserts V
HH
on
the ACC pin, the device automatically enters the Un-
lock Bypass mode. The system may then write the
two-cycle Unlock Bypass program command se-
quence. The device uses the higher voltage on the
ACC pin to accelerate the operation.
Note that the
ACC pin must not be at V
HH
for operations other than
accelerated programming, or device damage may re-
sult. In addition, the ACC pin must not be left floating
or unconnected; inconsistent behavior of the device
may result.
Figure 4 illustrates the algorithm for the program oper-
ation. See the table, “Erase and Program Operations”
on page 45 for parameters, and Figure 16 for timing di-
agrams.
相關PDF資料 |
PDF描述 |
|---|---|
| AM29LV065MU110FF | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV065MU110WHF | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV065MU112EF | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV065MU112EI | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV065MU112FI | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV065MU120REI | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 8M x 8 120ns 48-Pin TSOP |
| AM29LV081B-120ED | 制造商:Spansion 功能描述:IC SM FLASH 3V 8MB |
| AM29LV081B-120ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29LV081B-70EC | 制造商:Advanced Micro Devices 功能描述: 制造商:Atmel Corporation 功能描述: |
| AM29LV081B-70ED | 制造商:Spansion 功能描述:IC FLASH MEMORY PARALLEL 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 8, 40 Pin, Plastic, TSSOP |
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