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參數(shù)資料
| 型號： | AM29LV065MU112RWHI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 8M X 8 FLASH 3V PROM, 110 ns, PBGA63 |
| 封裝： | 12 X 11 MM, 0.80 MM PITCH, FBGA-63 |
| 文件頁數(shù)： | 56/62頁 |
| 文件大?。?/td> | 778K |
| 代理商： | AM29LV065MU112RWHI |
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54
Am29LV065MU
September 12, 2006
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32–byte write buffer operation.
4. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
10 for further information on command definitions.
7. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
15
sec
Excludes 00h programming
prior to erasure (Note 5)
Chip Erase Time
64
128
sec
Effective Byte Program Time, using the Write
Buffer (Note 3)
11
57
μs
Excludes system level
overhead (Note 6)
Effective Accelerated Byte Program Time, using
the Write Buffer (Note 3)
8.8
49
μs
Single Byte Program Time
100
800
μs
Accelerated Single Byte Program Time (Note 4)
90
720
μs
Chip Program Time, using the Write Buffer
92
170
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
相關(guān)PDF資料 |
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| AM29LV065MU112WHF | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV065MU112WHI | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV065MU120EF | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV065MU120REF | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV065MU120REI | 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
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|---|---|
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