參數(shù)資料
型號： AM29LV065MU25EF
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 64兆位（8米× 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門閃存記憶體與VersatileI /輸出⑩控制
文件頁數(shù)： 6/62頁
文件大?。?/td> 778K
代理商： AM29LV065MU25EF
4
Am29LV065MU
September 12, 2006
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations .....................................................10
VersatileIO
(V
IO
) Control .....................................................10
Requirements for Reading Array Data ...................................10
Page Mode Read ....................................................................11
Writing Commands/Command Sequences ............................11
Write Buffer .............................................................................11
Accelerated Program Operation .............................................11
Autoselect Functions ..............................................................11
Standby Mode........................................................................ 11
Automatic Sleep Mode ...........................................................11
RESET#: Hardware Reset Pin ...............................................12
Output Disable Mode ..............................................................12
Table 2. Sector Address Table ........................................................13
Autoselect Mode..................................................................... 17
Table 3. Autoselect Codes, (High Voltage Method) .......................17
Sector Group Protection and Unprotection .............................18
Table 4. Sector Group Protection/Unprotection AddressTable .....18
Temporary Sector Group Unprotect .......................................19
Figure 1. Temporary Sector Group UnprotectOperation................ 19
Figure 2. In-System Sector Group Protect/UnprotectAlgorithms... 20
SecSi (Secured Silicon) Sector Flash MemoryRegion ..........21
Table 5. SecSi Sector Contents ......................................................21
Figure 3. SecSi Sector Protect Verify.............................................. 22
Hardware Data Protection ......................................................22
Low VCC Write Inhibit ............................................................22
Write Pulse “Glitch” Protection ...............................................22
Logical Inhibit ..........................................................................22
Power-Up Write Inhibit ............................................................22
Common Flash Memory Interface (CFI). . . . . . . 22
Table 6. CFI Query Identification String.............................. 23
Table 7. System Interface String......................................................23
Table 8. Device Geometry Definition................................... 24
Table 9. Primary Vendor-Specific Extended Query............. 25
Command Definitions . . . . . . . . . . . . . . . . . . . . . 25
Reading Array Data ................................................................25
Reset Command .....................................................................26
Autoselect Command Sequence ............................................26
Enter SecSi Sector/Exit SecSi Sector CommandSequence ..26
Byte Program Command Sequence .......................................26
Unlock Bypass Command Sequence .....................................27
Write Buffer Programming ......................................................27
Accelerated Program ..............................................................28
Figure 4. Write Buffer Programming Operation............................... 29
Figure 5. Program Operation.......................................................... 30
Program Suspend/Program Resume Command Sequence ...30
Figure 6. Program Suspend/Program Resume............................... 31
Chip Erase Command Sequence ...........................................31
Sector Erase Command Sequence ........................................31
Erase Suspend/Erase Resume Commands ...........................32
Figure 7. Erase Operation............................................................... 33
Command Definitions............................................................. 34
Table 10. Command Definitions.......................................................34
Write Operation Status. . . . . . . . . . . . . . . . . . . . . 35
DQ7: Data# Polling .................................................................35
Figure 8. Data# Polling Algorithm.................................................. 35
RY/BY#: Ready/Busy#............................................................ 36
DQ6: Toggle Bit I ....................................................................36
Figure 9. Toggle Bit Algorithm........................................................ 36
DQ2: Toggle Bit II ...................................................................37
Reading Toggle Bits DQ6/DQ2 ...............................................37
DQ5: Exceeded Timing Limits ................................................37
DQ3: Sector Erase Timer .......................................................37
DQ1: Write-to-Buffer Abort .....................................................38
Table 11. Write Operation Status ...................................................38
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 39
Figure 10. Maximum Negative OvershootWaveform................... 39
Figure 11. Maximum Positive OvershootWaveform..................... 39
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 39
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 1. Maximum Negative OvershootWaveform..................... 39
Figure 2. Maximum Positive OvershootWaveform....................... 39
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 39
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 40
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 12. Test Setup.................................................................... 41
Table 12. Test Specifications .........................................................41
Key to Switching Waveforms. . . . . . . . . . . . . . . . 41
Figure 13. Input Waveforms and
Measurement Levels...................................................................... 41
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 42
Read-Only Operations ...........................................................42
Figure 14. Read Operation Timings............................................... 42
Figure 15. Page Read Timings...................................................... 43
Hardware Reset (RESET#) ....................................................44
Figure 16. Reset Timings............................................................... 44
Erase and Program Operations ..............................................45
Figure 17. Program Operation Timings.......................................... 46
Figure 18. Accelerated Program Timing Diagram.......................... 46
Figure 19. Chip/Sector Erase Operation Timings.......................... 47
Figure 20. Data# Polling Timings
(During Embedded Algorithms)...................................................... 48
Figure 21. Toggle Bit Timings
(During Embedded Algorithms)...................................................... 49
Figure 22. DQ2 vs. DQ6................................................................. 49
Temporary Sector Unprotect ..................................................50
Figure 23. Temporary Sector Group Unprotect TimingDiagram... 50
Figure 24. Sector Group Protect and Unprotect TimingDiagram.. 51
Alternate CE# Controlled Erase and ProgramOperations .....52
Figure 25. Alternate CE# Controlled Write (Erase/Program)
OperationTimings.......................................................................... 53
Erase And Programming Performance. . . . . . . . 54
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 54
TSOP Pin and BGA Package Capacitance . . . . . 55
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 56
TS 048—48-Pin Standard Thin Small Outline Package .........56
TSR048—48-Pin Reverse Thin Small Outline Package .........57
FBE063—63-Ball Fine-Pitch Ball Grid Array, 12 x 11 mm
Package ..................................................................................58
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 59
相關(guān)PDF資料
PDF描述
AM29LV065MU25EI 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU25FF 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU25FI 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU25WHF 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU25WHI 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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