參數(shù)資料
型號(hào)： AM29LV065MU40FF
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 64兆位（8米× 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門閃存記憶體與VersatileI /輸出⑩控制
文件頁(yè)數(shù)： 47/62頁(yè)
文件大小： 778K
代理商： AM29LV065MU40FF
September 12, 2006
Am29LV065MU
45
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1.
2.
Not 100% tested.
See the “Erase And Programming Performance” section for more
information.
3.
For 1–32 bytes programmed.
4.
Effective write buffer specification is based upon a 32-byte write
buffer operation.
5.
five Byte programming specification is based upon a single byte
programming operation not utilizing the write buffer.
6.
AC specifications listed are tested with V
IO
= V
CC
. Contact AMD for
information on AC operation with V
IO
≠
V
CC
.
7.
When using the program suspend/resume feature, if the suspend
command is issued within t
POLL
, t
POLL
must be fully re-applied upon
resuming the programming operation. If the suspend command is
issued after t
POLL
, t
POLL
is not required again prior to reading the
status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R Unit
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation
(Note 2)
,
(Note 3)
Typ
352
μs
Effective Byte Program Time, using the Write Buffer
(Note 2)
,
(Note 4)
Typ
11
μs
Effective Accelerated Byte Program Time, using the Write Buffer (Notes
(Note 2)
,
(Note 4)
Typ
8.8
μs
Single Byte Program Operation
(Note 2)
,
(Note 5)
Typ
100
μs
Accelerated Single Byte Programming Operation
(Note 2)
,
(Note 5)
Typ
90
μs
t
WHWH2
t
WHWH2
Sector Erase Operation
(Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time
(Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time
(Note 1)
Min
50
μs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
WE# High to RY/BY# Low
Max
90
100
110
120
ns
t
POLL
Program Valid Before Status Polling
(Note 7)
Max
4
μs
相關(guān)PDF資料
PDF描述
AM29LV065MU40FI 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU40WHF 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU40WHI 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU90EF 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU90EI 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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