參數(shù)資料
型號: AM29LV065MU90FI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 8M X 8 FLASH 3V PROM, 90 ns, PDSO48
封裝: REVERSE, TSOP-48
文件頁數(shù): 27/62頁
文件大小: 778K
代理商: AM29LV065MU90FI
September 12, 2006
Am29LV065MU
25
D A T A S H E E T
Table 9.
Primary Vendor-Specific Extended Query
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 10 defines the valid register command
sequences. Writing
incorrect
address and data val-
ues
or writing them in the
improper sequence
may
place the device in an unknown state. A reset com-
mand is then required to return the device to reading
array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the
AC Characteristics
section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
Addresses
Data
Description
40h
41h
42h
50h
52h
49h
Query-unique ASCII string “PRI”
43h
31h
Major version number, ASCII
44h
33h
Minor version number, ASCII
45h
09h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Process Technology (Bits 7-2) 0010b = 0.23 μm MirrorBit
46h
02h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
04h
Sector Protect
0 = Not Supported, X = Number of sectors per group
48h
01h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
04h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
00h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
00h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
01h
Page Mode Type
00 = Not Supported, 01 = 8 Byte Page
4Dh
B5h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh
C5h
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh
00h
Top/Bottom Boot Sector Flag
00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top
Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top
WP# protect
50h
01h
Program Suspend
00h = Not Supported, 01h = Supported
相關(guān)PDF資料
PDF描述
AM29LV065MU90REF 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU90RFF 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU90RWHF 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU90WHF 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV065MU90WHI 64 Megabit (8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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