參數(shù)資料
型號(hào): AM29LV081B120EC
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
中文描述: 8兆位(1米× 8位)的CMOS 3.0伏特,只有統(tǒng)一部門閃存
文件頁數(shù): 25/40頁
文件大小: 438K
代理商: AM29LV081B120EC
21525D6
October 12, 2006
Am29LV081B
23
D AT A S H E E T
DC CHARACTERISTICS (CONTINUED)
Zero Power Flash
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
S
Time in ns
Note:
Addresses are switching at 1 MHz
Figure 9. I
CC1
Current vs. Time (Showing Active and Automatic Sleep Currents)
10
8
2
0
1
2
3
4
5
Frequency in MHz
S
Note:
T = 25
°
C
Figure 10. Typical I
CC1
vs. Frequency
2.7 V
3.6 V
4
6
相關(guān)PDF資料
PDF描述
AM29LV081B120ED 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EE 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EF 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EI 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EK 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
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