參數(shù)資料
型號: AM29LV1282M
英文描述: 256 Megabit (8M x 32-Bit/16M x 16-Bit) MirrorBit? 3.0 Volt-only Uniform Sector Flash Memory (Preliminary)
中文描述: 256兆位(8米× 32-Bit/16M x 16位)的MirrorBit? 3.0伏特,只有統(tǒng)一部門閃存(初步)
文件頁數(shù): 29/35頁
文件大?。?/td> 744K
代理商: AM29LV1282M
Am29LV040B
29
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-60R
-70
-90
-120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
60
70
90
120
ns
t
ELAX
t
AH
Address Hold Time
Min
45
45
45
50
ns
t
DVEH
t
DS
Data Setup Time
Min
35
35
45
50
ns
t
ELEH
t
CP
CE# Pulse Width
Min
35
35
35
50
ns
t
AVEL
t
AS
Address Setup Time
Min
0
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
9
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
相關(guān)PDF資料
PDF描述
AM29LV160BB-120EC x8/x16 Flash EEPROM
AM29LV160BB-80WCC x8/x16 Flash EEPROM
AM29LV160BB-80WCE x8/x16 Flash EEPROM
AM29LV160BB-80WCI x8/x16 Flash EEPROM
AM29LV160BB-90EC x8/x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV128MH103REI 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 56-Pin TSOP
AM29LV128MH113REI 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 110ns 56-Pin TSOP
AM29LV128MH113RFI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays
AM29LV128MH113RPCI 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA
AM29LV128MH123REI 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 120ns 56-Pin TSOP