參數(shù)資料
型號: Am29LV160BB120FIB
廠商: Advanced Micro Devices, Inc.
元件分類: FLASH
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導扇區(qū)閃存
文件頁數(shù): 38/46頁
文件大小: 649K
代理商: AM29LV160BB120FIB
P R E L I M I N A R Y
38
Am29LV160B
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
80R
90
120
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note:
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
21358F-25
Figure 21.
DQ2 vs. DQ6 for Erase and Erase Suspend Operations
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 3 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
21358F-26
Figure 22.
Temporary Sector Unprotect Timing Diagram
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