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參數(shù)資料
| 型號： | Am29LV160BB70RWCI |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 48/48頁 |
| 文件大?。?/td> | 695K |
| 代理商： | AM29LV160BB70RWCI |
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Am29LV160B
47
REVISION SUMMARY
Revision F
Distinctive Characteristics
Changed typical read and program/erase current
specifications.
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Figure 2, In-System Sector Protect/Unprotect
Algorithms (0.35 μm devices)
Corrected A6 to 0, Changed wait specification to 150
μ
s
on sector protect and 15 ms on sector unprotect.
DC Characteristics
Changed typical read and program/erase current
specifications.
AC Characteristics
Alternate CE# Controlled Erase/Program Operations:
Changed t
CP
to 35 ns for 70R, 80, and 90 speed
options.2w
Erase and Programming Performance
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Physical Dimensions
Corrected dimensions for package length and width in
FBGA illustration (standalone data sheet version).
Revision F+1
Table 9, Command Definitions
Corrected the byte-mode address in the sixth write
cycle of the chip erase command sequence to AAAh.
Revision F+2
Figure 2, In-System Sector Protect/Unprotect
Algorithms (0.35 μm devices)
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor” back to setting up the next sector address.
DC Characteristics
Changed I
CC1
test conditions and Note 1 to indicate
that OE# is at V
IH
for the listed current.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations:
Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 23, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cycles.
Revision G
Global
Added 70R speed option, changed 80R speed option
to 80.
Distinctive Characteristics
Changed process technology to 0.32 μm.
DC Characteristics
Moved V
CC
max test condition for I
CC
specifications
to notes.
Connection Diagrams
Corrected the reverse TSOP drawing to show orienta-
tion and pin 1 indicators.
Distinctive Characteristics
Added 20-year data retention bullet.
Connection Diagrams
Updated FBGA figure.
Ordering Information
Changed FBGA package reference to FBC048;
addded FBGA package marking information.
Physical Dimensions
Changed drawing to FBC048.
Revision G+1
Connection Diagrams
FBGA:
Corrected to indicate that diagram shows the
top view, balls facing down.
Command Definitions Table
Corrected the address in the sixth cycle of the chip
erase sequence to AAAh.
Trademarks
Copyright 1999 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of
Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for iden-
tification purposes only and may be trademarks of their respective companies.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AM29LV160BT-120EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP Tray |
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| AM29LV160BT-90FC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| AM29LV160DB120EI | 制造商:Advanced Micro Devices 功能描述: |
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