參數資料
型號: Am29LV160BT80REE
廠商: Advanced Micro Devices, Inc.
英文描述: Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 2000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252"; Container: Bulk; Features: High Voltage; Unmarked
中文描述: 16兆位(2米× 8位/ 1個M x 16位),3.0伏的CMOS只引導扇區(qū)閃存
文件頁數: 30/46頁
文件大小: 649K
代理商: AM29LV160BT80REE
P R E L I M I N A R Y
30
Am29LV160B
TEST CONDITIONS
Table 11.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
21358F-15
Figure 11.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
80R
90,
120
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
21358F-16
Figure 12.
Input Waveforms and Measurement Levels
相關PDF資料
PDF描述
Am29LV160BT80REI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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