參數(shù)資料
型號： AM29LV160DB-120EI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： Time-Delay Relay; Time Range:1 sec. to 480 sec.; Timing Function:Delay-On-Make; Leaded Process Compatible:Yes; Supply Voltage Max:288V; Supply Voltage Min:19V; Time Range Max:480s; Time Range Min:3s RoHS Compliant: Yes
中文描述： 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝： MO-142DD, TSOP-48
文件頁數(shù)： 45/50頁
文件大?。?/td> 1191K
代理商： AM29LV160DB-120EI
44
Am29LV160D
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 9 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
25
s
Byte Programming Time
5
150
μs
Excludes system level
overhead (Note 5)
Word Programming Time
7
210
μs
Chip Programming Time
(Note 3)
Byte Mode
11
33
s
Word Mode
7.2
21.6
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關PDF資料
PDF描述
AM29LV160DB-120FC Time-Delay Relay; Contacts:NO; Time Range:1 sec. to 1024 sec.; Timing Function:Delay-On-Make; Leaded Process Compatible:Yes; Supply Voltage Max:288V; Supply Voltage Min:19V; Time Range Max:1024s; Time Range Min:1s RoHS Compliant: Yes
AM29LV160DB-120EC INTERVAL/SINGLE SHOT TIMER
AM29LV160DB-70WCC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90WCC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-120SE 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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