參數(shù)資料
型號(hào): AM29LV160DB-120FC
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: Time-Delay Relay; Contacts:NO; Time Range:1 sec. to 1024 sec.; Timing Function:Delay-On-Make; Leaded Process Compatible:Yes; Supply Voltage Max:288V; Supply Voltage Min:19V; Time Range Max:1024s; Time Range Min:1s RoHS Compliant: Yes
中文描述: 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝: REVERSE, MO-142DD, TSOP-48
文件頁(yè)數(shù): 41/50頁(yè)
文件大?。?/td> 1191K
代理商: AM29LV160DB-120FC
40
Am29LV160D
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note:
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 21.
DQ2 vs. DQ6 for Erase and
Erase Suspend Operations
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 3 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
Figure 22.
Temporary Sector Unprotect/Timing Diagram
相關(guān)PDF資料
PDF描述
AM29LV160DB-120EC INTERVAL/SINGLE SHOT TIMER
AM29LV160DB-70WCC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-90WCC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DB-120SE 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160DT-120EE Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1000pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate
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