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參數(shù)資料
| 型號(hào)： | AM29LV160MB30EI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個(gè)M x 16位）的MirrorBit?3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 28/63頁 |
| 文件大?。?/td> | 967K |
| 代理商： | AM29LV160MB30EI |
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26
Am29LV160M
25974B5 January31,2007
D a t a S h e e t
Notes:
See Tables 10 and 11 for program command sequence.
Figure 4.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does
not
require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations.
Table 10, on page 31
and
Table 11, on page 32
show the address and data requirements for the chip erase command sequence.
Note that the Secured Silicon Sector, autoselect, and CFI functions are unavail-
able when an erase operation is in progress.
Any commands written to the chip during the Embedded Erase algorithm are ig-
nored. Note that a
hardw are reset
during the chip erase operation immediately
terminates the operation. The Chip Erase command sequence should be reiniti-
ated once the device returns to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. See
“Autoselect Command Sequence” on page 24
for informa-
tion on these status bits. When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are no longer latched.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV160MB50FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB50PCI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB50WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB70REI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB70RFI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MB70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV160MB90EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP |
| AM29LV160MB90WAI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin FBGA |
| AM29LV160MT110EI | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 3V, MIRRORBIT, TOP, TSOP48, IND - Trays |
| AM29LV160MT70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
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