參數(shù)資料
型號: AM29LV160MB50FI
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16兆位(2米× 8位/ 1個M x 16位)的MirrorBit?3.0伏,只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 31/63頁
文件大小: 967K
代理商: AM29LV160MB50FI
January31,2007 25974B5
Am29LV160M
29
D a t a S h e e t
Notes:
1. See
Table 10, on page 31
and
Table 11, on page 32
for erase command sequence.
2. See
“DQ3: Sector Erase Timer” on page 38
for more information.
Figure 5.
Erase Operation
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming
operation so that data can be read from any non-suspended sector. When the
Program Suspend command is written during a programming process, the de-
vice halts the program operation within 15
μ
s maximum (5
μ
s typical) and
updates the status bits. Addresses are not required when writing the Program
Suspend command.
After the programming operation is suspended, the system can read array data
from any non-suspended sector. The Program Suspend command may also be
issued during a programming operation while an erase is suspended. In this
case, data may be read from any addresses not in Erase Suspend or Program
Suspend. If a read is needed from the Secured Silicon Sector area (One-time
Program area), then user must use the proper command sequences to enter and
exit this region.
The system may also write the autoselect command sequence when the device
is in the Program Suspend mode. The system can read as many autoselect
codes as required. When the device exits the autoselect mode, the device re-
verts to the Program Suspend mode, and is ready for another valid operation.
See Autoselect Command Sequence for more information.
After the Program Resume command is written, the device reverts to program-
ming. The system can determine the status of the program operation using the
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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