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參數(shù)資料
| 型號： | AM29LV160MB50PCI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位）的MirrorBit?3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 24/63頁 |
| 文件大?。?/td> | 967K |
| 代理商： | AM29LV160MB50PCI |
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22
Am29LV160M
25974B5 January31,2007
D a t a S h e e t
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing
provides data protection against inadvertent writes (refer to
Table 10, on page 31
and
Table 11, on page 32
for command definitions). In addition, the following
hardware data protection measures prevent accidental erasure or programming,
which might otherwise be caused by spurious system level signals during V
CC
power-up and power-down transitions, or from system noise.
Low V
CC
W rite I nhibit
When V
CC
is less than V
LKO
, the device does not accept any write cycles. This pro-
tects data during V
CC
power-up and power-down. The command register and all
internal program/erase circuits are disabled, and the device resets. Subsequent
writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent unintentional writes when V
CC
is
greater than V
LKO
.
W rite Pulse “ Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write
cycle.
Table 9.
Primary Vendor-Specific Extended Query
Addresses
( W ord Mode)
Addresses
( Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
0008h
Address Sensitive Unlock (Bit 1–0)
0b = Required, 1b = Not Required
Process Technology (Bits 7–2)
0010b = 0.23 μm MirrorBit
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV160MB50WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB70REI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB70RFI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB70RPCI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB70RWAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MB70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV160MB90EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP |
| AM29LV160MB90WAI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin FBGA |
| AM29LV160MT110EI | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 3V, MIRRORBIT, TOP, TSOP48, IND - Trays |
| AM29LV160MT70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
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