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參數(shù)資料
| 型號： | AM29LV160MB85WAI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位）的MirrorBit?3.0伏，只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 4/63頁 |
| 文件大?。?/td> | 967K |
| 代理商： | AM29LV160MB85WAI |
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2
Am29LV160M
25974B5 January31,2007
D a t a S h e e t
General Description
The Am29LV160M is a 16 Mbit, 3.0 Volt-only Flash memory organized as
2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch
BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16)
appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The de-
vice requires only a
single 3.0 volt pow er supply
for both read and write
functions, designed to be programmed in-system with the standard system 3.0
v olt V
C C
supply . T he dev ice can also be prog rammed in standard
EPROM programmers.
The device offers access times of 70, 85, 90, and 100 ns. To eliminate bus conten-
tion the device contains separate chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.
The device is entirely command set compatible with the
J EDEC single-pow er-
supply Flash standard
. Commands are written to the device using standard
microprocessor write timing. Write cycles also internally latch addresses and data
needed for the programming and erase operations.
The
sector erase architecture
allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through command sequences.
Once a program or erase operation starts, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or monitor the
Ready/ Busy#
( RY / BY # )
output to determine whether the operation is complete. To facilitate
programming, an
Unlock Bypass
mode reduces command sequence overhead
by requiring only two write cycles to program data instead of four.
Hardw are data protection
measures include a low V
CC
detector that automati-
cally inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combina-
tion of sectors of memory. This can be achieved in-system or via programming
equipment.
The
Erase Suspend/ Erase Resume
feature allows the host system to pause an
erase operation in a given sector to read or program any other sector and then
complete the erase operation. The
Program Suspend/ Program Resume
fea-
ture enables the host system to pause a program operation in a given sector to
read any other sector and then complete the program operation.
The
hardw are RESET# pin
terminates any operation in progress and resets the
device, after which it is then ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would thus also reset the de-
vice, enabling the host system to read boot-up firmware from the Flash memory
device.
The device reduces power consumption in the
standby mode
when it detects
specific voltage levels on CE# and RESET#, or when addresses are stable for a
specified period of time.
The
S ecured S ilicon S ector
provides a 128-word/256-byte area for code or
data that can be permanently protected. Once this sector is protected, no further
changes within the sector can occur.
MirrorBit flash technology combines years of Flash memory manufacturing expe-
rience to produce the highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector simultaneously via hot-hole
assisted erase. The data is programmed using hot electron injection.
相關PDF資料 |
PDF描述 |
|---|---|
| AM29LV160MB90EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB90FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB90PCI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB90WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT30EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MB90EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP |
| AM29LV160MB90WAI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin FBGA |
| AM29LV160MT110EI | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 3V, MIRRORBIT, TOP, TSOP48, IND - Trays |
| AM29LV160MT70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV200BB-120EC | 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
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