- 您現(xiàn)在的位置：買賣IC網 > PDF目錄366488 > AM29LV160MB90FI (ADVANCED MICRO DEVICES INC) 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29LV160MB90FI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | REVERSE, MO-142B, TSOP-48 |
| 文件頁數(shù)： | 30/63頁 |
| 文件大?。?/td> | 967K |
| 代理商： | AM29LV160MB90FI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁當前第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁
28
Am29LV160M
25974B5 January31,2007
D a t a S h e e t
Suspend command is ignored if written during the chip erase operation or Em-
bedded Program algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the time-out period and suspends
the erase operation. Addresses are “don’t-cares” when writing the Erase Suspend
command.
When the Erase Suspend command is written during a sector erase operation, the
device requires a maximum of 20 μs to suspend the erase operation. However,
when the Erase Suspend command is written during the sector erase time-out,
the device immediately terminates the time-out period and suspends the erase
operation.
After the erase operation is suspended, the system can read array data from or
program data to any sector not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Normal read and write timings and
command definitions apply. Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and
DQ2 together, to determine if a sector is actively erasing or is erase-suspended.
See
“Write Operation Status” on page 33
for information on these status bits.
After an erase-suspended program operation is complete, the system can once
again read array data within non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See
“Write Operation Status” on page 33
for
more information.
The system may also write the autoselect command sequence when the device
is in the Erase Suspend mode. The device allows reading autoselect codes even
at addresses within erasing sectors, since the codes are not stored in the memory
array. When the device exits the autoselect mode, the device reverts to the Erase
Suspend mode, and is ready for another valid operation. See
“Autoselect Com-
mand Sequence” on page 24
for more information.
The system must write the Erase Resume command (address bits are “don’t
care”) to exit the erase suspend mode and continue the sector erase operation.
Further writes of the Resume command are ignored. Another Erase Suspend
command can be written after the device resumes erasing.
Note:
During an erase operation, this flash device performs multiple internal op-
erations which are invisible to the system. When an erase operation is
suspended, any of the internal operations that were not fully completed must be
restarted. As such, if this flash device is continually issued suspend/resume com-
mands in rapid succession, erase progress is impeded as a function of the number
of suspends. The result is a longer cumulative erase time than without suspends.
Note that the additional suspends do not affect device reliability or future perfor-
mance. In most systems rapid erase/suspend activity occurs only briefly. In such
cases, erase performance is not significantly impacted.
相關PDF資料 |
PDF描述 |
|---|---|
| AM29LV160MB90PCI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MB90WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT30EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT30FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT30PCI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MB90WAI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin FBGA |
| AM29LV160MT110EI | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 3V, MIRRORBIT, TOP, TSOP48, IND - Trays |
| AM29LV160MT70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV200BB-120EC | 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| AM29LV200BB-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復。