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參數資料
| 型號： | AM29LV160MB90WAI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 0.80 MM PITCH, FBGA-48 |
| 文件頁數： | 3/63頁 |
| 文件大小： | 967K |
| 代理商： | AM29LV160MB90WAI |
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This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications
due to changes in technical specifications.
Publication Number
25974
Revision
B
Amendment
5
Issue Date
January 31, 2007
Am29LV160M
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit
TM
3.0 Volt-only Boot Sector Flash Memory
Distinctive Characteristics
Architectural Advantages
Single pow er supply operation
— 3 V for read, erase, and program operations
Manufactured on 0.23 μm MirrorBit
TM
process
technology
— Fully compatible with Am29LV160D device
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-
one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and thirty-
one 32 Kword sectors (word mode)
Compatibility w ith J EDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
Top or bottom boot block configurations available
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125
°
C
Performance Characteristics
High performance
— Access times as fast as 70 ns
— 0.7 s typical sector erase time
Low pow er consumption ( typical values at 5 MHz)
— 400 nA standby mode current
— 15 mA read current
— 40 mA program/erase current
— 400 nA Automatic Sleep mode current
Package options
— 48-ball Fine-pitch BGA
— 64-ball Fortified BGA
— 48-pin TSOP
Softw are Features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardw are Features
— Sector Protection: hardware-level method of
preventing write operations within a sector
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
This product has been retired and is not available for designs. For new and current designs, S29GL016A supersedes Am29LV160M and is the factory-recom-
mended migration path. Please refer to the S29GL016A datasheet for specifications and ordering information. Availability of this document is retained for
reference and historical purposes only.
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| AM29LV160MT30PCI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT30WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AM29LV160MT110EI | 制造商:Spansion 功能描述:16M (2MX8/1MX16) 3V, MIRRORBIT, TOP, TSOP48, IND - Trays |
| AM29LV160MT70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV200BB-120EC | 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| AM29LV200BB-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP |
| AM29LV200BB-90FC | 制造商:Advanced Micro Devices 功能描述:2 Mb (128K x 16) Boot Sector, Flash Memory |
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