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參數(shù)資料
| 型號： | AM29LV160MT35EI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位）的MirrorBit?3.0伏，只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 27/63頁 |
| 文件大?。?/td> | 967K |
| 代理商： | AM29LV160MT35EI |
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January31,2007 25974B5
Am29LV160M
25
D a t a S h e e t
indicate the operation was successful. However, a succeeding read shows that the
data is still “0”. Only erase operations can convert a “0” to a “1”.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to the
device faster than using the standard program command sequence. The unlock
bypass command sequence is initiated by first writing two unlock cycles. This is
followed by a third write cycle containing the unlock bypass command, 20h. The
device then enters the unlock bypass mode. A two-cycle unlock bypass program
command sequence is all that is required to program in this mode. The first cycle
in this sequence contains the unlock bypass program command, A0h; the second
cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two unlock cycles required
in the standard program command sequence, resulting in faster total program-
ming time.
Table 10, on page 31
and
Table 11, on page 32
show the
requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock By-
pass Reset commands are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle
must contain the data 90h; the second cycle the data 00h. Addresses are don’t
care for both cycles. The device then returns to reading array data.
Figure 4, on page 26
illustrates the algorithm for the program operation. See the
table
“Erase/Program Operations” on page 45
for parameters, and
Figure 17, on
page 46
for timing diagrams.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV160MT35FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT35PCI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT35WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT50EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT50FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MT70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV200BB-120EC | 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| AM29LV200BB-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP |
| AM29LV200BB-90FC | 制造商:Advanced Micro Devices 功能描述:2 Mb (128K x 16) Boot Sector, Flash Memory |
| AM29LV256MH120RPGI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays |
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