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參數(shù)資料
| 型號： | AM29LV160MT35PCI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位）的MirrorBit?3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 60/63頁 |
| 文件大?。?/td> | 967K |
| 代理商： | AM29LV160MT35PCI |
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58
Am29LV160M
25974B5 January31,2007
D a t a S h e e t
Revision Summary
Revision A (June 24, 2002)
Initial release.
Revision A+1 (July 3, 2002)
Added LAA064 package.
Corrected power consumption currents.
Changed DC Characteristics Zero Power Flash tables to TBD.
Corrected minimum erase and program cycle endurance.
Revision A+2 (December 6, 2002)
Global
Removed 44-pin SO package. Deleted dashes from ordering part numbers.
Distinctive Characteristics
Added information for Secured Silicon sector, Program Suspend & Resume. Cor-
rected erase endurance to 100K cycles. Changed section flow to match other
MirrorBit data sheets.
General Description
Changed section flow to match other MirrorBit data sheets.
Connection Diagrams
Corrected Fortified BGA diagram: balls C5, D8, D4, and F1 are now NC.
Ordering I nformation and Operating Ranges
Removed Commercial and Extended temperature ranges. Corrected Fine-pitch
BGA type to 6 x 8 mm package, FBA048.
Added package markings for the LAA064.
Secured Silicon Sector Flash Memory Region
Added section.
Program Suspend/ Program Resume Command Sequence
Added text and flowchart.
Sector Protection/ Unprotection
Deleted reference to alternate, high-voltage method of sector protection.
Command Definitions
Modified introductory paragraph to indicate device behavior when presented with
incorrect commands and data. Added mode restrictions to first paragraphs of pro-
gram, sector erase and chip erase subsections.
Command Definitions tables
Replaced previous table with two tables. Byte mode and word mode are now
shown separately. Added Secured Silicon Sector Factory Protect command
sequence.
Table 10. W rite Operation Status
Added Program Suspend Mode rows to table.
BGA and TSOP Capacitance
Added fine-pitch BGA capacitance to table.
AC Characteristics tables
Typical sector erase time is now 0.4 s in all tables.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV160MT35WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT50EI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT50FI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT50PCI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV160MT50WAI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160MT70EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 70NS 48TSOP - Trays |
| AM29LV200BB-120EC | 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| AM29LV200BB-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP |
| AM29LV200BB-90FC | 制造商:Advanced Micro Devices 功能描述:2 Mb (128K x 16) Boot Sector, Flash Memory |
| AM29LV256MH120RPGI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays |
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