參數(shù)資料
型號: AM29LV200BB-120SI
英文描述: x8/x16 Flash EEPROM
中文描述: x8/x16閃存EEPROM
文件頁數(shù): 30/35頁
文件大小: 744K
代理商: AM29LV200BB-120SI
30
Am29LV040B
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
WHWH1 or 2
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Notes:
1. PA = Program Address, PD = Program Data, DQ7# = complement of the data written to the device, D
OUT
is the data written
to the device.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 17.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
AM29LV200BB120WAC EEPROM|FLASH|128KX16/256KX8|CMOS|BGA|48PIN|PLASTIC
AM29LV200BB55RWAI EEPROM|FLASH|128KX16/256KX8|CMOS|BGA|48PIN|PLASTIC
AM29LV200BB-70EC EEPROM|FLASH|128KX16/256KX8|CMOS|TSSOP|48PIN|PLASTIC
AM29LV200BB-70EI x8/x16 Flash EEPROM
AM29LV200BB-70FC EEPROM|FLASH|128KX16/256KX8|CMOS|TSSOP|48PIN|PLASTIC
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