- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄366494 > AM29LV200BB-120SK (Advanced Micro Devices, Inc.) 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | AM29LV200BB-120SK |
| 廠(chǎng)商： | Advanced Micro Devices, Inc. |
| 元件分類(lèi)： | FLASH |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 2兆位（256Kx8Bit/128Kx16位），3.0伏的CMOS引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 21/46頁(yè) |
| 文件大?。?/td> | 716K |
| 代理商： | AM29LV200BB-120SK |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)當(dāng)前第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)
October 10, 2006 21521D6
Am29LV200B
19
D AT A S H E E T
Command Definitions
Table 5. Am29LV200B Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A16–A12 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.
5. Address bits A16–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.
6. No unlock or command cycles required when reading array
data.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is a
read cycle.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
10. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
11. The Unlock Bypass Reset command is required to return to
reading array data when the device is in the unlock bypass
mode.
12. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
13. The Erase Resume command is valid only during the Erase
Suspend mode.
Command
Sequence
(Note 1)
C
1
1
Bus Cycles (Notes 2–5)
Third
Addr
Data Addr
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
555
AAA
555
AAA
555
AAA
Data
RD
F0
Data
Data
Addr Data
Addr
Data
Read (Note 6)
Reset (Note 7)
Manufacturer ID
Word
Byte
Word
Byte
Word
Byte
4
AA
2AA
555
2AA
555
2AA
555
55
555
AAA
555
AAA
555
AAA
90
X00
01
Device ID,
Top Boot Block
Device ID,
Bottom Boot Block
4
AA
55
90
X01
X02
X01
X02
(SA)
X02
223B
3B
22BF
BF
XX00
XX01
00
01
4
AA
55
90
Sector Protect Verify
(Note 9)
Word
4
555
AA
2AA
55
555
90
Byte
AAA
555
AAA
(SA)
X04
Program
Word
Byte
Word
Byte
4
555
AAA
555
AAA
XXX
XXX
555
AAA
555
AAA
XXX
XXX
AA
2AA
555
2AA
555
PA
XXX
2AA
555
2AA
555
55
555
AAA
555
AAA
A0
PA
PD
Unlock Bypass
3
AA
55
20
Unlock Bypass Program (Note 10)
Unlock Bypass Reset (Note 11)
2
2
A0
90
PD
00
Chip Erase
Word
Byte
Word
Byte
6
AA
55
555
AAA
555
AAA
80
555
AAA
555
AAA
AA
2AA
555
2AA
555
55
555
AAA
10
Sector Erase
6
AA
55
80
AA
55
SA
30
Erase Suspend (Note 12)
Erase Resume (Note 13)
1
1
B0
30
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV200BB-120WAC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200BB-120WAD | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200BB-120WAE | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200BB-120WAF | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200BB-120WAI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV200BB-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP |
| AM29LV200BB-90FC | 制造商:Advanced Micro Devices 功能描述:2 Mb (128K x 16) Boot Sector, Flash Memory |
| AM29LV256MH120RPGI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays |
| AM29LV256MH123RPGI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV256MH94REI | 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。