參數資料
型號: AM29LV200BB35DRE1
廠商: Advanced Micro Devices, Inc.
英文描述: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
中文描述: 2兆位(256畝x 8-Bit/128畝x 16位),3.0伏的CMOS只,引導扇區(qū)快閃記憶體,修編模具1
文件頁數: 8/11頁
文件大?。?/td> 200K
代理商: AM29LV200BB35DRE1
8
Am29LV200B Known Good Die
November 18, 2003
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29LV200B product qualification database. AMD
implements quality assurance procedures throughout
the product test flow. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in. In addition, an off-line qualifica-
tion maintenance program (QMP) further guarantees
AMD quality standards are met on Known Good Die
products.
Figure 1.
AMD KGD Product Test Flow
Wafer Sort 1
Bake
24 hours at 250
°
C
Wafer Sort 2
Wafer Sort 3
High Temperature
Packaging for Shipment
Shipment
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
相關PDF資料
PDF描述
AM29LV200BB35DRI1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
AM29LV200BB35DTC1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
AM29LV200BB35DTE1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
AM29LV200BB35DTI1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
AM29LV200BB35DWC1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
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