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參數(shù)資料
| 型號(hào)： | AM29LV200BT-90SE |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁(yè)數(shù)： | 1/35頁(yè) |
| 文件大小： | 744K |
| 代理商： | AM29LV200BT-90SE |
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This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21354
Issue Date:
November 13, 2000
Rev:
D
Amendment/
+1
Am29LV040B
4 Megabit (512 K x 8-Bit)
CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
I
Manufactured on 0.32 μm process technology
I
High performance
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast as
60 ns
I
Ultra low power consumption (typical values at
5 MHz)
— Automatic sleep mode: 1 μA
— Standby mode: 1 μA
— Read mode: 7 mA
— Program/erase mode: 15 mA
I
Flexible sector architecture
— Eight 64 Kbyte sectors
— Any combination of sectors can be erased;
supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to prevent
any program or erase operations within that sector
Sectors can be locked via programming
equipment
I
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
I
Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write/erase cycles
guaranteed
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package option
— 32-pin PLCC
— 32-pin TSOP
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
I
Erase Suspend/Resume
— Supports reading data from or programming data
to a sector not being erased
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV200BT-90SI | EEPROM|FLASH|128KX16/256KX8|CMOS|SOP|44PIN|PLASTIC |
| AM29LV200BT90WAC | EEPROM|FLASH|128KX16/256KX8|CMOS|BGA|48PIN|PLASTIC |
| AM29LV400BB-120DPC1 | EEPROM |
| AM29LV400BB-120DPE1 | EEPROM |
| AM29LV400BB-120DPI1 | EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
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| AM29LV256MH120RPGI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays |
| AM29LV256MH123RPGI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV256MH94REI | 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays |
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
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