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參數(shù)資料
| 型號： | AM29LV200T-100EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | Circular Connector; No. of Contacts:3; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:8-33 RoHS Compliant: No |
| 中文描述： | 256K X 8 FLASH 3V PROM, 100 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 15/37頁 |
| 文件大?。?/td> | 478K |
| 代理商： | AM29LV200T-100EC |
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15
Am29LV200
P R E L I M I N A R Y
Table 5.
Am29LV200 Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A16–A12 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.
5. Address bits A16–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.
6. No unlock or command cycles required when reading array
data.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is a
read cycle.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
10. The system may read and program n non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
11. The Erase Resume command is valid only during the Erase
Suspend mode.
Command
Sequence
(Note 1)
Bus Cycles (Notes 2–5)
Third
Addr
Data Addr
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
555
AAA
555
AAA
555
AAA
Data
RD
F0
Data
Data
Addr Data
Addr
Data
Read (Note 6)
Reset (Note 7)
1
1
Manufacturer ID
Word
Byte
Word
Byte
Word
Byte
4
AA
2AA
555
2AA
555
2AA
555
55
555
AAA
555
AAA
555
AAA
90
X00
01
Device ID,
Top Boot Block
4
AA
55
90
X01
223B
3B
22BF
BF
XX00
XX01
00
01
X02
X01
Device ID,
Bottom Boot Block
4
AA
55
90
X02
Sector Protect Verify
(Note 9)
Word
4
555
AA
2AA
55
555
90
(SA)
X02
Byte
AAA
555
AAA
(SA)
X04
Program
Word
Byte
Word
Byte
Word
Byte
4
555
AAA
555
AAA
555
AAA
XXX
XXX
AA
2AA
555
2AA
555
2AA
555
55
555
AAA
555
AAA
555
AAA
A0
PA
PD
Chip Erase
6
AA
55
80
555
AAA
555
AAA
AA
2AA
555
2AA
555
55
555
AAA
10
Sector Erase
6
AA
55
80
AA
55
SA
30
Erase Suspend (Note 10)
Erase Resume (Note 11)
1
1
B0
30
C
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV200T-100ECB | Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| AM29LV200T-100EE | Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| AM29LV200T-90REC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200B-90REC | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV200T-90REEB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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