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Am29LV200
P R E L I M I N A R Y
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, D
OUT
= data written to the
device.
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
20513D-25
Figure 22.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV200T-120FCB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200T-120FE | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200T-120FEB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200T-120FI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV200T-120FIB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV256MH120RPGI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays |
| AM29LV256MH123RPGI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV256MH94REI | 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays |
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
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